NLS based Modeling and Characterization of Switching Dynamics for Antiferroelectric/Ferroelectric Hafnium Zirconium Oxides
Yu‐Chen Chen, K.-Y. Hsiang, Ying–Tsan Tang, M. H. Lee, Pin Su
Abstract
In this work, we have conducted an NLS-based Monte-Carlo modeling and characterization for antiferroelectric/ferroelectric (AFE/FE) Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-</inf> <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Zr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> (HZO). With the coexistence of orthorhombic-phase (FE) and tetragonal-phase (AFE) grains and the crucial consideration of back-switching field, our generalized NLS model is capable of describing the switching dynamics and frequency response of AFE/FE HZO. Our experimentally verified model is adequate for modeling HZO with certain AFE and FE properties, which can be beneficial to future memory applications and neuromorphic computing.