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GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review

Nelaturi Nagendra Reddy, Pratikhya Raut, Deepak Kumar Panda

2024Micro and Nanostructures16 citationsDOI

Topics & Concepts

Ambipolar diffusionTunnel field-effect transistorQuantum tunnellingOptoelectronicsTransistorMOSFETMaterials scienceWork functionElectrical engineeringSubthreshold conductionScalingField-effect transistorNanotechnologyEngineeringVoltagePhysicsElectronMathematicsLayer (electronics)Quantum mechanicsGeometryAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure Analysis
GSE and GWE techniques to improve on (ION) current and ambipolar conduction of tunnel FET(TFET) device: A comprehensive review | Litcius