InTeI: a novel wide-bandgap 2D material with desirable stability and highly anisotropic carrier mobility
Shujuan Jiang, Jingyu Li, Weizhen Chen, Huabing Yin, Guangping Zheng, Yuanxu Wang
Abstract
based on first-principles calculations. With an exfoliating energy lower than that of monolayer phosphorene, it is feasible to synthesize the 2D InTeI monolayer through mechanical exfoliation from their 3D bulk crystals. Remarkably, the monolayer InTeI achieves the indirect-to-direct bandgap transition under a small in-plane uniaxial strain, while a quasi-direct bandgap can be achieved in the InTeI nanosheets with elevated thickness. The InTeI monolayer and nanosheets have suitable band alignments in the visible-light excitation region. In addition, our theoretical simulations determine that 2D InTeI materials exhibit more excellent oxidation resistance than black phosphorene. The results not only identify a novel class of 2D wide-bandgap semiconductors but also demonstrate their potential applications in nanoelectronics and optoelectronics.