Fully printed memristors made with MoS<sub>2</sub> and graphene water-based inks
Zixing Peng, Alessandro Grillo, Aniello Pelella, Xuzhao Liu, Matthew Boyes, Xiaoyu Xiao, Minghao Zhao, Jingjing Wang, Zhirun Hu, Antonio Di Bartolomeo, Cinzia Casiraghi
Abstract
and remains stable at least up to 2% of strain. The memristor resistance switching is attributed to the formation of Ag conductive filaments, which can be suppressed by integrating graphene grown by chemical vapour deposition (CVD) onto the silver electrode. Temperature-dependent electrical measurements starting from 200 K show that memristic behavior appears at a temperature of ∼300 K, confirming that an energy threshold is needed to form the conductive filament. This work shows that inkjet printing is a very powerful technique for the fabrication of 2DMs-based resistive switches onto rigid and flexible substrates.