Flexible SnO Optoelectronic Memory Based on Light-Dependent Ionic Migration in Ruddlesden–Popper Perovskite
Qianlei Tian, Ruohao Hong, Chang Liu, Xitong Hong, Sen Zhang, Liming Wang, Yawei Lv, Xingqiang Liu, Xuming Zou, Lei Liao
Abstract
Nonvolatile optoelectronic memories based on organic–inorganic hybrid perovskites have appeared as powerful candidates for next-generation soft electronics. Here, ambipolar SnO transistor-based nonvolatile memories with multibit memory behavior (11 storage states, 120 nC state–1) and ultralong retention time (>105 s) are demonstrated for which an Al2O3/two-dimensional Ruddlesden–Popper perovskite (2D PVK) heterostructure dielectric architecture is employed. The unique storage features are attributed to suppressed gate leakage by Al2O3 layer and hopping-like ionic transport in 2D PVK with varying activation energy under different light intensities. The photoinduced field-effect mechanism enables top-gated transistor operation under illumination, which would not be achieved under dark. As a result, the device exhibits remarkable photoresponsive characteristics, including ultrahigh specific detectivity (2.7 × 1015 Jones) and broadband spectrum distinction capacity (375–1064 nm). This study offers valuable insight on the PVK-based dielectric engineering for information storage and paves the way toward multilevel broadband-response optoelectronic memories.