Investigation of Electrically Active Defects in SiC Power Diodes Caused by Heavy Ion Irradiation
N. Für, Manuel Belanche, C. Martinella, Piyush Kumar, Marianne Etzelmüller Bathen, Ulrike Großner
Abstract
Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analysed and compared to devices showing or not signatures of Single Event Leakage Current (SELC) degradation. An additional peak labelled ‘C’ with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.
Topics & Concepts
IrradiationMaterials scienceDiodeOptoelectronicsHeavy ionSilicon carbideIonPower (physics)Electrical engineeringNuclear engineeringPhysicsNuclear physicsEngineeringQuantum mechanicsMetallurgySilicon Carbide Semiconductor TechnologiesIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and devices