H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces
Sabria Benrabah, Maxime Legallais, P. Besson, Simon Ruel, Laura Vauche, Bernard Pélissier, Chloé Thieuleux, B. Salem, Matthew Charles
Topics & Concepts
X-ray photoelectron spectroscopyDry etchingEtching (microfabrication)Materials scienceReactive-ion etchingMicroelectronicsHigh-electron-mobility transistorWet cleaningPhosphoric acidAnalytical Chemistry (journal)Isotropic etchingLayer (electronics)NanotechnologyChemical engineeringChemistryMetallurgyTransistorChromatographyOrganic chemistryVoltagePhysicsQuantum mechanicsEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices