ReRAM: History, Status, and Future
Yangyin Chen
Abstract
This article reviews the resistive random-access memory (ReRAM) technology initialization back in the 1960s and its heavily focused research and development from the early 2000s. This review goes through various oxygen/oxygen vacancy and metal-ion-based ReRAM devices and their operation mechanisms. This review also benchmarks the performance of various oxygen/oxygen vacancy and metal-ion-based ReRAM devices with general trend drawn. Being a semiconductor memory and storage technology, the commercialization attempts for both stand-alone mass storage/storage-class memory and embedded nonvolatile memory are also reviewed. Looking toward the coming era, the potential of using ReRAM technology to improve machine learning efficiency is discussed.