Growth and characterization of detector-grade CdMnTeSe
Jangwon Byun, J. Seo, J. Seo, Beomjun Park
Abstract
The Cd0.95Mn0.05Te0.98Se0.02 (CMTS) ingot was grown by the vertical Bridgman technique at low pressure. All wafers showed high resistivity, which suggests potential as a room-temperature semiconductor detector. The resistivity of the CMTS planar detector was 1.47 × 1010 Ω· cm and mobility lifetime product of electrons was 1.29 × 10−3 cm2/V. The spectroscopic property with Am-241 and Co-57 was evaluated. The energy resolution about 59.5 keV gamma-ray of Am-241 was 11% and the photo-peak of 122 keV gamma-ray from Co-57 was clearly distinguished. The result shows the first detector-grade CMTS in the world and proves CMTS’s potential as a radiation detector operating at room temperature.
Topics & Concepts
IngotDetectorWaferMaterials scienceElectronSemiconductorSemiconductor detectorElectrical resistivity and conductivityPlanarRadiationOptoelectronicsElectron mobilityPhysicsOpticsNuclear physicsComposite materialQuantum mechanicsComputer scienceAlloyComputer graphics (images)Advanced Semiconductor Detectors and MaterialsChalcogenide Semiconductor Thin FilmsNuclear Materials and Properties