A 68-dB Isolation 1.0-dB Loss Compact CMOS SPDT RF Switch Utilizing Switched Resonance Network
Xi Fu, Yun Wang, Zheng Li, Atsushi Shirane, Kenichi Okada
Abstract
In this paper, a single-pole double-throw (SPDT) Ku-band RF switch with 68-dB port isolation and 1.0-dB insertion loss is presented with a novel switched parallel LC resonance network. The measured isolation is higher than 50 dB from 9 GHz to 19 GHz. The SPDT RF switch composes of two series-shunt transistor switch pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> . The SPDT RF switch is fabricated in standard 65 nm CMOS technology. The measured results show the port-to-port isolation of 68-dB with 1.0-dB insertion loss at the center frequency of 15 GHz. The measured output third-order intercept (OIP3) is higher than 21 dBm with a 0.034 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> compact on-chip core size. The proposed SPDT RF switch maintains return losses of all working ports less than 10 dB from 8 GHz to 20 GHz.