Development of high-sensitivity piezoresistive pressure sensors for −0.5…+0.5 kPa
Mikhail Basov, Denis Prigodskiy
Abstract
Abstract A mathematical model of an ultrahigh sensitivity piezoresistive chip of a pressure sensor with a range from −0.5 to 0.5 kPa has been developed. The optimum geometrical dimensions of a specific silicon membrane with a combination of rigid islands to ensure a trade-off relationship between sensitivity (S samples = 34.5 mV kPa −1 V −1 ) and nonlinearity (2K NL samples = 0.81%FS) have been determined. The paper also studies the range of the membrane deflection and makes recommendations on position of stops limiting diaphragm deflection in both directions; the stops allow for increasing burst pressure P burst up to 450 kPa. The simulated data has been related to that of experimental samples and their comparative analysis showed the relevance of the mathematical model (estimated sensitivity and nonlinearity errors calculated on the basis of average values are 1.5% and 19%, respectively).