Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
Xingchen Pang, Yang Wang, Yuyan Zhu, Zhenhan Zhang, Du Xiang, Xun Ge, Haoqi Wu, Yongbo Jiang, Zizheng Liu, Xiaoxian Liu, Chunsen Liu, Weida Hu, Peng Zhou
Abstract
Abstract In-sensor processing has the potential to reduce the energy consumption and hardware complexity of motion detection and recognition. However, the state-of-the-art all-in-one array integration technologies with simultaneous broadband spectrum image capture (sensory), image memory (storage) and image processing (computation) functions are still insufficient. Here, macroscale (2 × 2 mm 2 ) integration of a rippled-assisted optoelectronic array (18 × 18 pixels) for all-day motion detection and recognition. The rippled-assisted optoelectronic array exhibits remarkable uniformity in the memory window, optically stimulated non-volatile positive and negative photoconductance. Importantly, the array achieves an extensive optical storage dynamic range exceeding 10 6 , and exceptionally high room-temperature mobility up to 406.7 cm 2 V −1 s −1 , four times higher than the International Roadmap for Device and Systems 2028 target. Additionally, the spectral range of each rippled-assisted optoelectronic processor covers visible to near-infrared (405 nm–940 nm), achieving function of motion detection and recognition.