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Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation

Toshiki Mii, Hitoshi Sakane, Shunta Harada, Masashi Kato

2022Materials Science in Semiconductor Processing16 citationsDOI

Topics & Concepts

Materials scienceDegradation (telecommunications)Layer (electronics)Bipolar junction transistorOptoelectronicsEngineering physicsElectronic engineeringElectrical engineeringComposite materialTransistorVoltageEngineeringSilicon Carbide Semiconductor TechnologiesElectromagnetic Compatibility and Noise SuppressionMultilevel Inverters and Converters
Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation | Litcius