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Improved Figure of Merit of Cu<sub>2</sub>SnSe<sub>3</sub> via Band Structure Modification and Energy-Dependent Carrier Scattering

Hongwei Ming, Chen Zhu, Xiaoying Qin, Jian Zhang, Di Li, Baoli Zhang, Tao Chen, Jimin Li, Xunuo Lou, Hongxin Xin

2020ACS Applied Materials & Interfaces35 citationsDOI

Abstract

As an ecofriendly thermoelectric material with intrinsic low thermal conductivity, ternary diamond-like Cu2SnSe3 (CSS) has attracted much attention. Nevertheless, its figure of merit, ZT, is limited by its small thermopower (S) and power factor (PF). Here, we show that an increase in thermopower by 63% and a carrier-mobility rise of 81% at 300 K can be simultaneously achieved through 5% substitution of Fe for Sn due to both enhancement of electronic density of states and degeneracy of multiple valence band maxima, which lead to high PF = 10.3 μW·cm–1·K–2 at 823 K for Fe-doped CSS (CSFS). Besides, an ultrahigh PF of 14.8 μW·cm–1·K–2 (at 773 K) and 45% reduction of lattice thermal conductivity (at 823 K) are realized for CSFS-based composites with 0.125 wt % of MgO nanoinclusions, owing to further enhancement of S via energy-dependent scattering and strong phonon scattering by the embedded nanoparticles. Consequently, a maximum ZT = 1 at 823 K is reached for the CSFS/f MgO composite samples with f = 0.125 wt %, which is around 2.5 times larger than that of the CSS compound.

Topics & Concepts

Materials scienceFigure of meritPhonon scatteringTernary operationSeebeck coefficientThermoelectric effectCondensed matter physicsScatteringThermal conductivityDopingElectron mobilityThermoelectric materialsOptoelectronicsOpticsThermodynamicsComposite materialPhysicsComputer scienceProgramming languageAdvanced Thermoelectric Materials and DevicesChalcogenide Semiconductor Thin Films2D Materials and Applications
Improved Figure of Merit of Cu<sub>2</sub>SnSe<sub>3</sub> via Band Structure Modification and Energy-Dependent Carrier Scattering | Litcius