XPS Study in BiFeO3 Surface Modified by Argon Etching
G. A. Gomez-Iriarte, A. Pentón-Madrigal, L.A.S. de Oliveira, J.P. Sinnecker
Abstract
This paper reports an XPS surface study of pure phase BiFeO3 thin film produced and later etched by pure argon ions. Analysis of high-resolution spectra from Fe 2p, Bi 4f and 5d, O 1s, and the valence band, exhibited mainly Fe3+ and Bi3+ components, but also reveal Fe2+. High-energy argon etching induces the growth of Fe(0) and Bi(0) and an increment of Fe2+, as expected. The BiFeO3 semiconductor character is preserved despite the oxygen loss, an interesting aspect for the study of the photovoltaic effect through oxygen vacancies in some ceramic films. The metal-oxygen bonds in O 1s spectra are related only to one binding energy contrary to the split from bismuth and iron reported in other works. All these data evidence that the low-pressure argon atmosphere is proved to be efficient to produce pure phase BiFeO3, even after argon etching.