First Demonstration of Watt-Level C-Band MMIC Rectifier With GaN Schottky Diode
Kui Dang, Huining Liu, Chaoqun Zhang, Shudong Huo, Peng Zhan, Zhilin Qiu, Yachao Zhang, Hong Zhou, Jing Ning, Jincheng Zhang, Yue Hao
Abstract
In this letter, a watt-level C-band monolithic microwave integrated circuits (MMICs) rectifier with lateral gallium nitride (GaN) Schottky barrier diode (SBD) is demonstrated for the first time. The proposed MMIC is fabricated on SiC-based AlGaN/GaN heterojunction material with a circuit dimension of only <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.5\times2.1$ </tex-math></inline-formula> mm. Benefited from the high-performance GaN device and the well-designed circuit, high conversion efficiency of 51.4% is achieved at an input power of 30.3 dBm, a frequency of 5.5 GHz, and a load resistance of 120 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> , significantly outperforming previously reported MMIC rectifier and showing its great potential for high-power and high-efficiency microwave power transmission (MPT).