Ferroelectric field-effect transistors based on HfO <sub>2</sub> : a review

Halid Mulaosmanovic, Evelyn T. Breyer, Stefan Dünkel, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck

2021Nanotechnology308 citationsDOI

Abstract

Abstract In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs) based on ferroelectric hafnium oxide (HfO 2 ), ten years after the first report on such a device. With a focus on the use of FeFET for nonvolatile memory application, we discuss its basic operation principles, switching mechanisms, device types, material properties and array structures. Key device performance metrics such as cycling endurance, retention, memory window, multi-level operation and scaling capability are analyzed. We also briefly survey recent developments in alternative applications for FeFETs including neuromorphic and in-memory computing as well as radiofrequency devices.

Topics & Concepts

Materials scienceFerroelectricityField-effect transistorTransistorOptoelectronicsFerroelectric capacitorEngineering physicsElectrical engineeringDielectricVoltageEngineeringFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing