Role of the electronically-active amorphous state in low-temperature processed In<sub>2</sub>O<sub>3</sub> thin-film transistors
Ahmad R. Kirmani, Emily F. Roe, Christopher M. Stafford, Lee J. Richter
Abstract
crystallization but bypasses the electronically-active amorphous state and underperforms the sol-gel ink at low temperatures. Grain boundary formation and nanocrystalline inclusions in these films due to rapid combustion-assisted crystallization are suggested to be the likely origin behind the significantly compromised charge transport at low-temperatures. Overall, this study emphasizes the need to understand the complex interplay between local order (nanocrystallinity) and connectivity (grain boundary, amorphous phases) when optimizing low-temperature processed MO thin films.
Topics & Concepts
Thin-film transistorAmorphous solidTransistorMaterials scienceScatteringThin filmAnalytical Chemistry (journal)Electron mobilityCrystallographyOptoelectronicsChemistryElectrical engineeringNanotechnologyPhysicsOpticsChromatographyVoltageLayer (electronics)EngineeringThin-Film Transistor TechnologiesTransition Metal Oxide NanomaterialsCCD and CMOS Imaging Sensors