Observation of Low-Energy Proton Direct Ionization in a 72-Layer 3-D NAND Flash Memory
Edward P. Wilcox, Matthew Breeding, Megan C. Casey, Jonathan A. Pellish, Robert A. Reed, Michael L. Alles, Ronald D. Schrimpf
Abstract
Single-event upsets are observed in a 72-layer 3-D NAND flash memory operated in a single-level cell mode after low-energy proton (500 keV-1.2 MeV) and heavy-ion irradiation. The layer-by-layer error count is analyzed to visualize the stopping of low-energy protons within the memory stack, and Monte Carlo simulations are correlated with the experimental data. Direct ionization by low-energy protons is identified by 3-D data analysis and the energy dependence of device-sensitive cross section. Heavy-ion data is also presented for comparison.
Topics & Concepts
Stack (abstract data type)ProtonFlash (photography)IonizationMonte Carlo methodNAND gateIonFlash memoryMaterials scienceAtomic physicsEnergy (signal processing)PhysicsNuclear physicsLogic gateOpticsElectronic engineeringComputer scienceQuantum mechanicsMathematicsProgramming languageEngineeringStatisticsOperating systemRadiation Effects in ElectronicsSemiconductor materials and devicesAdvanced Memory and Neural Computing