Probing the Nature of Defects in Graphene by Raman Spectroscopy
Axel Eckmann, Alexandre Felten, Artem Mishchenko, L. Britnell, Ralph Krupke, Kostya S. Novoselov, Cinzia Casiraghi
Abstract
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (∼13) for sp(3)-defects, it decreases for vacancy-like defects (∼7), and it reaches a minimum for boundaries in graphite (∼3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.
Topics & Concepts
Raman spectroscopyGrapheneMaterials scienceVacancy defectGraphiteSpectroscopyNanotechnologyChemistryCrystallographyOpticsPhysicsQuantum mechanicsComposite materialGraphene research and applicationsDiamond and Carbon-based Materials ResearchCarbon Nanotubes in Composites