Reaction–Diffusion Mechanism of Synthesis in the Diamond–Silicon Carbide System
V. Ya. Shevchenko, С. Н. Перевислов
Abstract
Abstract Diamond–SiC composite materials were obtained by infiltration with gaseous and liquid Si. The mechanisms of the infiltration and consolidation of the diamond–silicon carbide composites were investigated. The effect of the Turing reaction–diffusion mechanism on the sintering of the diamond–SiC materials, the formation of the microstructure, and the mechanical performance was shown.
Topics & Concepts
DiamondSilicon carbideMaterials scienceSinteringMicrostructureSiliconCarbideComposite numberComposite materialInfiltration (HVAC)DiffusionChemical engineeringMetallurgyThermodynamicsEngineeringPhysicsDiamond and Carbon-based Materials ResearchAdvanced materials and compositesAdvanced ceramic materials synthesis