Trapping effects on AlGaN/GaN HEMT characteristics
P. Vigneshwara Raja, Jean‐Christophe Nallatamby, Nandita DasGupta, Amitava DasGupta
Topics & Concepts
High-electron-mobility transistorTrappingMaterials scienceOptoelectronicsTransient (computer programming)AdmittanceTrap (plumbing)Degradation (telecommunications)Gallium nitrideTransistorElectronic engineeringLayer (electronics)Electrical engineeringPhysicsNanotechnologyVoltageElectrical impedanceComputer scienceMeteorologyBiologyEngineeringOperating systemEcologyGaN-based semiconductor devices and materialsSemiconductor materials and devicesSemiconductor Quantum Structures and Devices