Evaluation of Nanostructured NiS<sub>2</sub> Thin Films from a Single-Source Precursor for Flexible Memristive Devices
Trishala R. Desai, R. Sai Prasad Goud, Tukaram D. Dongale, Chitra Gurnani
Abstract
High Resolution Image Download MS PowerPoint Slide Herein, we report the first demonstration of a single-step, in situ growth of NiS 2 nanostructures from a single-source precursor onto a flexible substrate as a versatile platform for an effective nonvolatile memristor. The low temperature, solution-processed deposition of NiS 2 thin films exhibits a wide band gap range, spherical-flower-like morphology with high surface area and porosity, and negligible surface roughness. Moreover, the fabricated Au/NiS 2 /ITO/PET memristor device reveals reproducible bipolar resistive switching (RS) at low operational voltages under both flat and bending conditions. The flexible device shows stable RS behavior for multiple cycles with a good memory window (∼10 2 ) and data retention of up to 10 4 s. The switching of a device between a high-resistance state and a low-resistance state is attributed to the filamentary conduction based on sulfur ion migration and sulfur vacancies and plays a key role in the outstanding memristive performance of the device. Consequently, this work provides a simple, scalable, solution-processed route to fabricate a flexible device with potential applications in next-generation neuromorphic computing and wearable electronics.