High-speed CMOS-compatible III-V on Si membrane photodetectors
Yannick Baumgartner, Daniele Caimi, Marilyne Sousa, Marinus Hopstaken, Yannick Salamin, Benedikt Baeuerle, Bertold Ian Bitachon, Juerg Leuthold, Jérôme Faist, Bert Jan Offrein, Lukas Czornomaz
Abstract
The monolithic integration of power-efficient optoelectronic devices with CMOS circuits is critical for future on-chip optical communication. In such platforms, ultra-high-speed photodetectors operating at datacom wavelengths are essential to convert optical signals in the electrical domain. Here, we demonstrate ultra-compact high-speed III-V/Si photodetectors integrated on silicon photonics and exclusively fabricated with processes and materials compatible with CMOS foundries. The sub-femtofarad capacitance, high responsivity photodetectors demonstrate a bandwidth around 65 GHz and data reception at 100 GBd OOK. Their thickness and efficiency enable an integration in the back-end-of-line without using an amplifier, further reducing the power consumption of the link.