Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB)
J. W. McPherson
Abstract
A molecular physics-based model is presented for understanding the frequency dependence of time-dependent dielectric breakdown (TDDB). The fundamental physics behind the frequency dependence comes from the relative dielectric constant ɛr, which is known to be frequency dependent. A small fractional power-law decrease in dielectric constant with frequency produces a lower local electric field with a significant improvement in TDDB lifetime with frequency.
Topics & Concepts
Time-dependent gate oxide breakdownDielectricDielectric strengthFrequency dependenceMaterials scienceElectric fieldCondensed matter physicsPower lawConstant (computer programming)Low frequencyPhysicsNuclear magnetic resonanceOptoelectronicsVoltageGate dielectricMathematicsQuantum mechanicsComputer scienceTransistorStatisticsProgramming languageAstronomySemiconductor materials and devicesMolecular Junctions and NanostructuresElectronic and Structural Properties of Oxides