Structure dependence of oscillation characteristics of structure-simplified resonant-tunneling-diode terahertz oscillator
Ta Van, Yusei Suzuki, Xiongbin Yu, Safumi Suzuki, Masahiro ASADA
Abstract
Abstract A structure-simplified resonant tunneling diode (RTD) oscillator eliminates metal–insulator–metal capacitors, resulting in a simple and brief fabrication process. However, the structure dependence of oscillation characteristics has not been identified. We revealed the structure dependence and obtained an oscillation frequency of up to ∼1 THz using a short antenna. We found that an increase in radiation conductance using offset-fed structure combined with coplanar stripline antennas is effective for high output power, and achieved up to ∼220 μ W of output power at 500 GHz. We also clarified the dependence of the oscillation frequency on the stabilization resistor.
Topics & Concepts
Oscillation (cell signaling)Resonant-tunneling diodeTerahertz radiationOptoelectronicsDiodeQuantum tunnellingCapacitorTunnel diodeMaterials scienceResistorStriplineOffset (computer science)Insulator (electricity)Metal-insulator-metalPhysicsOpticsVoltageLaserChemistryBiochemistryComputer scienceQuantum wellQuantum mechanicsProgramming languageTerahertz technology and applicationsSuperconducting and THz Device TechnologySemiconductor Quantum Structures and Devices