Two-Dimensional (C<sub>6</sub>H<sub>5</sub>C<sub>2</sub>H<sub>4</sub>NH<sub>3</sub>)<sub>2</sub>PbI<sub>4</sub> Perovskite Single Crystal Resistive Switching Memory Devices
Jiayu Di, Zhenhua Lin, Jie Su, Jiaping Wang, Jincheng Zhang, Liu Shengzhong, Jingjing Chang, Yue Hao
Abstract
Organic-inorganic halide perovskite has a wide range of applications in the photoelectric field due to its excellent properties, such as high charge carrier mobility, long carrier lifetime, and high light absorption efficiency. The application of perovskite in memristor devices has been developed recently. In this work, (PEA) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> PbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> single crystals are prepared by a modified space restriction method, and two-dimensional (2D) perovskite single crystal memristor based on Au/(PEA) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> PbI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> /Au device structure is prepared. The current ON/OFF ratio of the device can reach 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> at compliance current of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-7</sup> A. The electronic effect and conductive filament mechanism together constitute the working principle of the memristor device. Based on this working principle, multilevel storage can be realized in devices with different current levels.