Estimation of Maximum Photoresponsivity of <i>n</i>‐SnO<sub>2</sub>/<i>p</i>‐Si Heterojunction‐Based UV Photodetectors
Kenan Özel, A. Yıldız
Abstract
Photoresponsivity (PR) in photodetectors is of profound importance in evaluation of the performance of the devices. A detailed study of PR for n ‐SnO 2 / p ‐Si heterojunction‐based photodetectors is performed. The PR is analyzed within the framework of its relationship with incident power intensity ( P in ). Experimental results clearly indicate that the PR reaches its maximum value at low P in values, where it almost becomes independent of P in . This follows primarily from the experimentally observed incident power intensity and dark current dependences of PR. The detailed analyses in terms of incident power intensity and dark current in the investigated power intensity regime are utilized to extract the values for maximum attainable PR limit of the devices, which is estimated as 46.3 A W −1 . Evidently, the knowledge gained this work can be applicable to extract the maximum PR value for other heterojunction‐based UV photodetectors.