Improved SiC MOSFET Model Considering Channel Dynamics of Transfer Characteristics
Ning Wang, Jianzhong Zhang, Fujin Deng
Abstract
An improved SiC MOSFET model is proposed in this article, which predicts the dynamics accurately in the wide operation range of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> . The temperature-sensitive effect (TSE), the short channel effect (SCE), and the interface state effect are comprehensively taken into consideration in the modeling of the transfer characteristics. A dynamic test platform of transfer characteristics is designed to extract data better than the datasheet. The turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> and turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</small> processes of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> are decoupled, and the nonlinear interterminal capacitances are also modeled thoroughly. To verify the convergence and accuracy of the proposed model, a 400 V/30 A double pulse test is fulfilled, and the complex converters are also simulated with the proposed model. The results show that the proposed model has good convergence and accuracy in predicting the switching trajectory of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> , which would be favorable for observing the dynamics in the high-speed switching processes of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> .