The FinFET effect in Silicon Carbide MOSFETs
Florin Udrea, K. Naydenov, Hyemin Kang, Tomohisa Kato, Eiji Kagoshima, Takeshi Nishiwaki, Hiroshi Fujiwara, Tsunenobu Kimoto
Abstract
In ISPSD 2020 it has been shown that the effective mobility of a lateral 4H-SiC MOSFET could be increased by an order of magnitude through using an ultra-narrow-body design. Thus, this work presents further experimental results on a wide set of fin widths, ranging from conventional (860nm) to ultra-narrow (35nm). Furthermore, a 3D TCAD model, employing quantum corrections, is matched to experiment and applied to study these designs. It is thereby shown that the FinFET effect can have a strong impact in SiC devices and may allow for up to an 18x increase of the mobility relative to a reference width of 280nm. Finally, an optimization window of ~30-50nm is predicted for the fin width, below which the FinFET effect becomes detrimental.