Longitudinal and latitudinal split-gate field-effect transistors for NAND and NOR logic circuit applications
Minjong Lee, Chang Yong Park, Do Kyung Hwang, Min‐gu Kim, Young Tack Lee
Abstract
Abstract Two-dimensional (2D) materials have been extensively adopted in various device architectures for advanced applications owing to their structural diversity, high functionality, and ease of integration. Among the various architectures, split-gate field-effect transistors (SG-FETs) have been widely studied based on their sequentially located SG electrode along the source/drain electrodes. In this paper, we propose two different homogeneous molybdenum disulfide (MoS 2 )-based SG-FET structures, namely AND-FET and OR-FET, whose gap directions are perpendicular to each other. It can exhibit AND or OR switching characteristics if it has a longitudinal or latitudinal gapped SG structure, respectively. Moreover, the AND-FET and OR-FET are regarded as folded structures of series and parallel connections of two n-type transistors. By using these switching devices, we successfully demonstrate NAND and NOR logic gates through a single active channel. These approaches are expected to pave the way for the realization of multi-functionality and high integration of 2D material-based future electronic devices.