Landau level spectroscopy of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
Ivan Mohelský, A. Dubroka, J. Wyzula, A. O. Slobodeniuk, G. Martinez, Y. Krupko, B. A. Piot, Ondřej Caha, J. Humlı́ček, G. Bauer, G. Springholz, M. Orlita
Abstract
Bismuth telluride is a widely explored material in the condensed matter community and one of the first experimentally identified as a topological insulator. Nevertheless, despite considerable effort, the bulk electronic band structure of Bi${}_{2}$Te${}_{3}$ is known only partially. Here, the authors present a magneto-optical study of Bi${}_{2}$Te${}_{3}$, which provides one with compelling evidence that bismuth telluride is a direct-gap semiconductor, with a multiple valley degeneracy and charge carriers that closely resemble massive Dirac electrons.
Topics & Concepts
SpectroscopyPhysicsQuantum mechanicsTopological Materials and PhenomenaAdvanced Thermoelectric Materials and Devices2D Materials and Applications