Investigation of Noise Spectrum and Radiated EMI in High Switching Frequency Flyback Converters
Juntao Yao, Yanwen Lai, Zhedong Ma, Shuo Wang
Abstract
This paper investigates noise spectrums and radiated EMI in high-frequency gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback (ACF) converters. Influential factors for the noise spectrums are investigated, including the switching frequency, dv/dt and waveform symmetry, voltage magnitude, duty cycle, etc. Moreover, in the radiated EMI frequency range, the relationship between spectrum valleys and dv/dt is analyzed. In the investigated GaN IC-based ACF, the voltage spectrums and radiated EMI with high line and low line input voltages are analyzed and investigated experimentally.
Topics & Concepts
EMIElectromagnetic interferenceFlyback transformerWaveformConvertersNoise (video)Electrical engineeringVoltagePhysicsAcousticsElectronic engineeringMaterials scienceEngineeringComputer scienceTransformerArtificial intelligenceImage (mathematics)Electromagnetic Compatibility and Noise SuppressionElectrostatic Discharge in ElectronicsSilicon Carbide Semiconductor Technologies