Altermagnetic Band Splitting in 10 nm Epitaxial CrSb Thin Films
Sandra Santhosh, Paul Corbae, Wilson Yanez, Supriya Ghosh, Christopher Jensen, А. В. Федоров, Makoto Hashimoto, Dong-Hui Lu, J. A. Borchers, Alexander J. Grutter, Timothy Charlton, Saurav Islam, Diana Golovanova, Yufei Zhao, Aria Tauraso, Anthony Richardella, Binghai Yan, K. Andre Mkhoyan, C. J. Palmstrøm, Yongxi Ou, Nitin Samarth
Abstract
Altermagnets are a newly identified family of collinear antiferromagnets with a momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Néel transition temperature of around 700 K. Molecular beam epitaxy is used to synthesize CrSb (0001) thin films with thicknesses ranging from 10 to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a bulk-type, 3D momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the ∼10 nm thin film limit at room temperature.