Light modulation of magnetization switching in PMN-PT/Ni heterostructure
Xu Zhang, Xiaobin Guo, Baoshan Cui, Jijun Yun, Jian Mao, Yalu Zuo, Li Xi
Abstract
The (011) Pb (Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT)/Ni heterostructure was prepared, and the influence of light on magnetization reversal behaviors of the Ni layer was investigated. We found that the ferroelectric domain of the PMN-PT substrate was tuned by a photostrictive effect, and it further changes the magnetization state of the adjacent Ni layer. Additionally, with electric field polarization, the PMN-PT/Ni heterostructure exhibits controllable magnetization switching behaviors under the application of a proper light intensity. It provides a reliable way to manipulate the magnetization switching process, which is promising for the design and implementation of low power memory and spintronic devices.