Asymmetric resistive switching by anion out-diffusion mechanism in transparent Al/ZnO/ITO heterostructure for memristor applications
Suman Gora, Lavanya Thyda, Gnyaneshwar Dasi, Reddivari Muniramaiah, Atul Thakre, Jitendra Gangwar, D. Paul Joseph, M. Kovendhan, P. Abdul Azeem, D. Dinakar, K. Thangaraju, Hitesh Borkar
Topics & Concepts
Materials scienceHeterojunctionDopingThin filmOptoelectronicsResistive touchscreenIonMemristorLattice (music)Condensed matter physicsNanotechnologyAnalytical Chemistry (journal)Electronic engineeringQuantum mechanicsEngineeringAcousticsChemistryChromatographyElectrical engineeringPhysicsAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsFerroelectric and Negative Capacitance Devices