High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

M. Y. Song, C. M. Lee, Shao‐Yu Yang, G. L. Chen, K. M. Chen, I J. Wang, Yu-Chen Hsin, K. T. Chang, Chen-Feng Hsu, S. H. Li, J. H. Wei, T. Y. Lee, Meng‐Fan Chang, Xinyu Bao, C.H. Diaz, S. J. Lin

20222022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)46 citationsDOI

Abstract

We demonstrated an 8Kb SOT-MRAM array which achieves the highest field-free switching speed (1ns) never reported. The low transistor switching voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SW</inf> ) 1.5V at switching current density (J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SW</inf> ) 68MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is attributed to the unique tungsten-based cSOT channel material (SCM) which provides high spin-Hall angle (~0.6) and low resistivity (160μΩ-cm) with 400℃ thermal budget. The 8Kb SOT-MRAM array also showed good read window and array yield thanks to the promising MTJ etching process. Excellent performances such as high retention ( >>10 years at RT) and high endurance 7e12 cycles are demonstrated as well.

Topics & Concepts

Magnetoresistive random-access memoryElectrical engineeringVoltageYield (engineering)Computer sciencePhysicsMaterials scienceComputer hardwareEngineeringRandom access memoryThermodynamicsFerroelectric and Negative Capacitance DevicesMagnetic properties of thin filmsAdvanced Memory and Neural Computing