Quality improvement mechanism of sputtered AlN films on sapphire substrates with high-miscut-angles along different directions
Yang Yue, Maosong Sun, Xu Li, Ting Liu, Yong Lu, Jie Chen, Yi Peng, Mudassar Maraj, Jicai Zhang, Wenhong Sun
Abstract
We studied the annealing mechanism of the films with high-miscut-angles at low cost and high efficiency and revealed the essence of annealing to improve the film quality lies in the annihilation of grain boundaries during the recrystallization.
Topics & Concepts
Recrystallization (geology)Annealing (glass)Materials scienceSapphireAnnihilationGrain boundaryOptoelectronicsCrystallographyMetallurgyOpticsMicrostructureChemistryLaserGeologyPhysicsPaleontologyQuantum mechanicsGaN-based semiconductor devices and materialsAcoustic Wave Resonator TechnologiesZnO doping and properties