Hall Effect in a Doped Mott Insulator: DMFT Approximation
É. Z. Kuchinskiǐ, N. A. Kuleeva, D. I. Khomskii, M. V. Sadovskiǐ
Abstract
In the framework of dynamical mean-field theory, we analyze the Hall effect in a doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of the Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of the Hall effect is noted. Good agreement is demonstrated with the concentration dependence of the Hall number obtained in experiments in the normal state of YBCO.
Topics & Concepts
Condensed matter physicsHall effectCuprateMott insulatorDopingSolid-state physicsPhysicsSuperconductivityQuantum Hall effectMean field theorySign (mathematics)Thermal Hall effectInsulator (electricity)Dynamical mean field theoryMaterials scienceQuantum mechanicsElectrical resistivity and conductivityMagnetic fieldElectronMathematicsOptoelectronicsMathematical analysisPhysics of Superconductivity and MagnetismAdvanced Condensed Matter PhysicsMagnetic and transport properties of perovskites and related materials