Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe<sub>5</sub>GeTe<sub>2</sub>
Cheng Tan, Wen-Qiang Xie, Guolin Zheng, Nuriyah Mohammed Aloufi, Sultan Albarakati, Meri Algarni, Junbo Li, J. G. Partridge, Dimitrie Culcer, Xiaolin Wang, Jiabao Yi, Mingliang Tian, Yimin Xiong, Yu‐Jun Zhao, Lan Wang
Abstract
has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.
Topics & Concepts
van der Waals forceMagnetCondensed matter physicsMaterials sciencePhase transitionCrystallographyChemistryPhysicsMoleculeQuantum mechanics2D Materials and ApplicationsIron-based superconductors researchTopological Materials and Phenomena