A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons
Marco Pocaterra, Mauro Ciappa, P. Pfaeffli
Abstract
TCAD simulation of the generation and transport of ionization tracks produced in semiconductors by ions is very relevant for device reliability, as well for the design of radiation detectors. This paper presents a unified model calibrated and validated for the charge generated along the ionization track of low-energy alpha particles and protons in Si, SiC, Ge, GaAs, and GaN. The new model presents several advantages over the traditional ones, in particular the ease of calibration, the numerical stability, and capability to be extended to other ion types.
Topics & Concepts
IonizationReliability (semiconductor)IonAlpha particleSemiconductorImpact ionizationCharge (physics)CalibrationDetectorEnergy (signal processing)Semiconductor deviceOptoelectronicsAtomic physicsComputational physicsMaterials sciencePhysicsNanotechnologyOpticsQuantum mechanicsLayer (electronics)Power (physics)Radiation Effects in ElectronicsRadiation Detection and Scintillator TechnologiesParticle Detector Development and Performance