Low-Power Transistors with Ideal p-type Ohmic Contacts Based on VS<sub>2</sub>/WSe<sub>2</sub> van der Waals Heterostructures
Zeng-Lin Cao, Lin Zhu, K.L. Yao
Abstract
Achieving low-resistance Ohmic contacts with a vanishing Schottky barrier is crucial for enhancing the performance of two-dimensional (2D) field-effect transistors (FETs). In this paper, we present a theoretical investigation of VS 2 /WSe 2 -vdWHs-FETs with a gate length ( L g ) in the range of 1–5 nm, using ab initio quantum transport simulations. The results show that a very low hole Schottky barrier height (−0.01 eV) can be achieved with perfect band offsets and reduced metal-induced gap states (MIGS), indicating the formation of p-type Ohmic contacts. Additionally, these FETs also exhibit an impressive low subthreshold swing (SS) (69 mV/dec) and high I on / I off (>10 7 ) with an appropriate underlap (UL) structure consisting of pristine WSe 2 . Furthermore, even when the L g is scaled down to 3 nm, the device can still meet the low-power (LP) requirements of the International Technology Roadmap for Semiconductors (ITRS) by controlling the UL. Consequently, this study provides valuable insights for the future development of LP 2D FETs.