Thermally Actuated SOI RF MEMS-Based Fully Integrated Passive Reflective-Type Analog Phase Shifter for mmWave Applications
Tejinder Singh, Navjot K. Khaira, Raafat R. Mansour
Abstract
This article presents a monolithically integrated reflective-type phase shifter (RTPS) utilizing silicon-on-insulator (SOI) radio frequency (RF) microelectromechanical systems (MEMS). The analog phase shifter employs a hybrid coupler and two identical reflective loads optimized to achieve a large phase shift range. The hybrid coupler is designed using two CPW-based couplers connected in a folded tandem configuration to achieve a compact size design. Various reflective load topologies are studied for optimum phase shift range and phase linearity over the bandwidth of interest. Measurement results demonstrate a continuous 120° tunable range from 26 to 30 GHz. The mmWave phase shifter exhibits a low insertion loss of 5.35 dB ± 0.6 dB at 28 GHz. The fabricated phase shifter has an overall device footprint of 4.0 mm × 2.6 mm. All the components of the phase shifter module are co-fabricated in the 20 μm device layer of a SOI wafer, which provides the flexibility of monolithic integration with other RF modules in phased array antenna systems. Contactless thermally actuated MEMS varactors are used in the reflective loads which do not suffer from the conventional contact-based reliability issues.