Formation and propagation mechanism of complex stacking fault in 180 μm thick 4H-SiC epitaxial layers
Nadeemullah A. Mahadik, Robert E. Stahlbush, Michael Dudley, Balaji Raghothamachar, Miguel Hinojosa, Aivars J. Lelis, Woongje Sung
Topics & Concepts
EpitaxyMaterials scienceStacking faultSilicon carbideStackingDislocationCrystallographyUltravioletPhotoluminescenceOptoelectronicsLayer (electronics)Composite materialChemistryOrganic chemistrySilicon Carbide Semiconductor TechnologiesThin-Film Transistor TechnologiesSemiconductor materials and interfaces