A 2.18-pJ/conversion, 1656-<i>μ</i>m² Temperature Sensor With a 0.61-pJ·K² FoM and 52-pW Stand-By Power
Kevin Pelzers, Haoming Xin, Eugenio Cantatore, Pieter Harpe
Abstract
This letter describes a miniature, ultra low power, all-dynamic temperature sensor based on a duty-cycled resistive transducer bridge and a 9-bit asynchronous SAR ADC in 65-nm CMOS. It features a novel floating bridge technique and automatic power gating to achieve the lowest reported power consumption. It consumes 2.18 pJ per conversion and has an RMS resolution of 0.53 K, leading to an FoM of 0.61 pJ·K <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A standby power of 52 pW allows a high power-efficiency, even at low sample rates. It occupies 36×46 μm of chip area and has a sensing range from -20 °C to 120 °C.
Topics & Concepts
Wheatstone bridgeElectrical engineeringDynamic rangeChipPower consumptionTransducerCMOSPower (physics)ThermometerResistive touchscreenPhysicsMaterials scienceAnalytical Chemistry (journal)OptoelectronicsEngineeringResistorChemistryOpticsVoltageQuantum mechanicsChromatographyAnalog and Mixed-Signal Circuit DesignAdvancements in Semiconductor Devices and Circuit DesignLow-power high-performance VLSI design