Epitaxial growth of bismuth oxyhalide thin films using mist CVD at atmospheric pressure
Zaichun Sun, Daichi Oka, Tomoteru Fukumura
Abstract
We report the epitaxial growth of bismuth oxyhalide BiOX (X = Cl, Br, and I) thin films using mist chemical vapour deposition at atmospheric pressure. The thin films grown under optimum conditions possessed atomically flat surfaces and high crystallinity, where the lattice constants of BiOX were controlled by epitaxial strain.
Topics & Concepts
BismuthMistAtmospheric pressureEpitaxyThin filmMaterials scienceChemical engineeringChemical vapor depositionMineralogyNanotechnologyChemistryMetallurgyMeteorologyPhysicsEngineeringLayer (electronics)Perovskite Materials and ApplicationsInorganic Chemistry and MaterialsAdvanced Condensed Matter Physics