Litcius/Paper detail

Reaction mechanisms of the initial steps for the oxidation of (000<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover></mml:math>) C and (0001) Si faces of SiC with OH radicals

Megumi Kayanuma, Tomohisa Kato, Tetsuya Morishita

2022Surface Science10 citationsDOI

Topics & Concepts

Dissociation (chemistry)ChemistryRadicalCrystallographyDensity functional theoryAtom (system on chip)MoleculeComputational chemistryPhysical chemistryOrganic chemistryEmbedded systemComputer scienceSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesAdvanced ceramic materials synthesis
Reaction mechanisms of the initial steps for the oxidation of (000<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.svg"><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover></mml:math>) C and (0001) Si faces of SiC with OH radicals | Litcius