Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO<sub>3</sub>/CeO<sub>2</sub> Heterostructure Devices
Shania Rehman, Honggyun Kim, Harshada Patil, Kalyani D. Kadam, Rizwan Ur Rehman Sagar, Jamal Aziz, Doo‐Seung Um, Muhammad Farooq Khan, Deok‐kee Kim
Abstract
Abstract Electronic devices with simultaneous manifestation of multiphysical properties are of great interest due to their possible application in multifunctional devices. In the present study, simultaneous execution of negative differential resistance (NDR) effect, current rectification (≈10 5 ), and resistive switching characteristics (≈10 3 ) are demonstrated in BaTiO 3 /CeO 2 heterostructure. Although the negative differential effect has gained huge attention, its instability and poor reproducibility at room temperature are the main obstacles to its possible application in electronic devices. However, in this report, the NDR is observed even after hundreds of cycles in BaTiO 3 /CeO 2 heterostructure at 300 K. For a detailed analysis of the NDR effect, AC conductance spectroscopy is performed, which reveals that the presence of NDR is associated with trapping/detrapping of charge carriers at interface states formed at the BaTiO 3 /CeO 2 interface . In addition, the resistive switching and rectification effect are demonstrated due to a barrier at the BaTiO 3 /CeO 2 interface, which can be strongly modulated by thickness (20, 50, and 80 nm) based ferroelectric polarization of BaTiO 3 . However, the results show that the remarkable performance of these devices makes them a potential candidate for application in multifunctional devices.