Atomistic Insights into the Phase Transformation of Single-Crystal Silicon during Nanoindentation
Young Jin Chung, Gi Hun Lee, Hyeon Gyu Beom
Abstract
The influence of the indenter angle on the deformation mechanisms of single-crystal Si was analyzed via molecular dynamics simulations of the nanoindentation process. Three different types of diamond conical indenters with semi-angles of 45°, 60°, and 70° were used. The load-indentation depth curves were obtained by varying the indenter angles, and the structural phase transformations of single-crystal Si were observed from an atomistic view. In addition, the hardness and elastic modulus with varying indenter angles were evaluated based on the Oliver-Pharr method and Sneddon's solution. The simulation results showed that the indenter angle had a significant effect on the load-indentation depth curves, which resulted from the strong dependence of the elastic and plastic deformation ratios on the indenter angle during indentations.