Nanoscale surface engineering of a high-<i>k</i> ZrO<sub>2</sub>/SiO<sub>2</sub> gate insulator for a high performance ITZO TFT <i>via</i> plasma-enhanced atomic layer deposition
Wan-Ho Choi, Woojin Jeon, Jin‐Seong Park
Abstract
Study of the correlation between mobility (<italic>μ</italic><sub>eff</sub>) and dielectric constant (<italic>k</italic>) in a PEALD high-<italic>k</italic> SiO<sub>2</sub>/ZrO<sub>2</sub> gate insulator structure <italic>via</italic> nanoscale engineering.
Topics & Concepts
Materials scienceHigh-κ dielectricNanoscopic scaleDielectricAtomic layer depositionAtomic unitsMISFETInsulator (electricity)TransistorLayer (electronics)NanotechnologyOptoelectronicsPhysicsField-effect transistorVoltageQuantum mechanicsSemiconductor materials and devicesThin-Film Transistor TechnologiesElectronic and Structural Properties of Oxides